Muhammad Alshahed

Gallium Nitride High Electron Mobility Transistors on Native Substrates for Power Switching Applications

Fabrication, Characterization and Modelling


Front	Back

ISBN:

978-3-8440-6885-6

Series:

Halbleitertechnik

Keywords:

Power electronics; Power semiconductors; HEMT; Bulk GaN; Thermal transfer function; Thermal modelling; Native GaN; Threading dislocations; Power switching; III-V semiconductors

Type of publication:

Thesis

Language:

English

Pages:

246 pages

Figures:

101 figures

Weight:

321 g

Format:

21 x 14,8 cm

Bindung:

Paperback

Price:

49,80 € / 62,30 SFr

Published:

August 2019

Buy:

DOI:

10.2370/9783844068856 (Online document)

Download:

Available PDF-Files for this title:

You need the Adobe Reader, to open the files. Here you get help and information, for the download.

These files are not printable.


	Document		Document
	Type		PDF
	Costs		37,35 EUR
	Action		Purchase in obligation and display of file - 4,2 MB (4393609 Byte)
	Action		Purchase in obligation and download of file - 4,2 MB (4393609 Byte)


	Document		Table of contents
	Type		PDF
	Costs		free
	Action		Display of file - 1,8 MB (1898375 Byte)
	Action		Download of file - 1,8 MB (1898375 Byte)

User settings for registered users

You can change your address here or download your paid documents again.

User:	Not logged in.
Actions:	Login / Register Forgotten your password?

Recommendation:

You want to recommend this title?

Review copy

Here you can order a review copy.

Link

You want to link this page? Click here.

Abstract

In this book the author highlights, for the first time, the superior properties and advantages of using native Gallium Nitride (GaN) substrates, which are wide spread in optical applications, also in the field of high voltage power transistors. The high electron mobility transistors (HEMTs) on the native GaN substrates feature superior electrical as well as thermal characteristics compared to those on foreign substrates such as Silicon and Sapphire.

In this work, the author presented a comprehensive comparison of GaN HEMTs on the different substrates. Besides, a theoretical model that predicts with high accuracy the electrical and thermal properties of GaN-based HEMTs as a function of the material quality has been successfully implemented and validated.

The results presented in this book received the best young scientist award at the European Solid-State Device Research Conference (ESSDERC) in 2016. Moreover, the author received his doctoral degree with distinction (summa cum laude) for the work presented in this book.