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49,80 €ISBN 978-3-8440-6885-6Softcover246 pages101 figures321 g21 x 14,8 cmEnglishThesis
August 2019
Muhammad Alshahed
Gallium Nitride High Electron Mobility Transistors on Native Substrates for Power Switching Applications
Fabrication, Characterization and Modelling
In this book the author highlights, for the first time, the superior properties and advantages of using native Gallium Nitride (GaN) substrates, which are wide spread in optical applications, also in the field of high voltage power transistors. The high electron mobility transistors (HEMTs) on the native GaN substrates feature superior electrical as well as thermal characteristics compared to those on foreign substrates such as Silicon and Sapphire.
In this work, the author presented a comprehensive comparison of GaN HEMTs on the different substrates. Besides, a theoretical model that predicts with high accuracy the electrical and thermal properties of GaN-based HEMTs as a function of the material quality has been successfully implemented and validated.
The results presented in this book received the best young scientist award at the European Solid-State Device Research Conference (ESSDERC) in 2016. Moreover, the author received his doctoral degree with distinction (summa cum laude) for the work presented in this book.
In this work, the author presented a comprehensive comparison of GaN HEMTs on the different substrates. Besides, a theoretical model that predicts with high accuracy the electrical and thermal properties of GaN-based HEMTs as a function of the material quality has been successfully implemented and validated.
The results presented in this book received the best young scientist award at the European Solid-State Device Research Conference (ESSDERC) in 2016. Moreover, the author received his doctoral degree with distinction (summa cum laude) for the work presented in this book.
Keywords: Power electronics; Power semiconductors; HEMT; Bulk GaN; Thermal transfer function; Thermal modelling; Native GaN; Threading dislocations; Power switching; III-V semiconductors
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DOI 10.2370/9783844068856
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